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SI3850DV - Specification Comparison

This page provides the datasheet information for the SI3850DV, a member of the SI3850ADV Specification Comparison family.

Description

Package: Pin Out: Complementary MOSFET Half-Bridge (N- and P-Channel) TSOP-6 Identical Part Number Replacements Si3850ADV-T1-E3 Replaces Si3850DV-T1-E3 Si3850ADV-T1-E3 Replaces Si3850DV-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Volta

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Datasheet preview – SI3850DV

Datasheet Details

Part number SI3850DV
Manufacturer Vishay Siliconix
File Size 91.52 KB
Description Specification Comparison
Datasheet download datasheet SI3850DV Datasheet
Additional preview pages of the SI3850DV datasheet.

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www.DataSheet4U.com Specification Comparison Vishay Siliconix Si3850ADV vs. Si3850DV Description: Package: Pin Out: Complementary MOSFET Half-Bridge (N- and P-Channel) TSOP-6 Identical Part Number Replacements Si3850ADV-T1-E3 Replaces Si3850DV-T1-E3 Si3850ADV-T1-E3 Replaces Si3850DV-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TA = 25 °C Continuous Drain Current TA = 70 °C Pulsed Drain Current Continuous Source Current (MOSFET Diode Conduction) Power Dissipation TA = 25 °C TA = 70 °C IDM IS PD Tj and Tstg RthJA ID VDS VGS Symbol N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Si3850ADV 20 - 20 ± 12 ± 12 1.4 - 0.96 1.1 - 0.77 3.5 - 2.0 0.9 - 0.9 1.08 0.7 - 55 to 150 115 Si3580DV 20 - 20 ± 12 ± 12 1.2 - 0.
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