SI3850DV
Description
: Package: Pin Out: plementary MOSFET Half-Bridge (N- and P-Channel) TSOP-6 Identical
Part Number Replacements Si3850ADV-T1-E3 Replaces Si3850DV-T1-E3 Si3850ADV-T1-E3 Replaces Si3850DV-T1
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage TA = 25 °C Continuous Drain Current TA = 70 °C Pulsed Drain Current Continuous Source Current (MOSFET Diode Conduction) Power Dissipation TA = 25 °C TA = 70 °C IDM IS PD Tj and Tstg Rth JA ID VDS VGS Symbol N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Si3850ADV 20
- 20 ± 12 ± 12 1.4
- 0.96 1.1
- 0.77 3.5
- 2.0 0.9
- 0.9 1.08 0.7
- 55 to 150 115 Si3580DV 20
- 20 ± 12 ± 12 1.2
- 0.85 0.95
- 0.65 3.5
- 2.5 1 -1 1.25 0.8
- 55 to 150 100 W °C °C/W A V Unit
Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient
Document Number: 73853 Revision: 31-Oct-06
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Specification parison
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless...
