SI3867DV
FEATURES
ID (A)
- 5.1
- 4.5
- 3.7
D Trench FETr Power MOSFET D PWM Optimized
APPLICATIONS
D DC/DC
- HDD
- Power Supplies D Portable Devices Such As Cell Phones, PDA, DSC, and DVC
(4) S
TSOP-6 Top View
1 3 mm 6 5
(3) G
4 (1, 2, 5, 6) D P-Channel MOSFET
2.85 mm Ordering Information: Si3867DV-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
5 secs
Steady State
- 20 "12
Unit
- 5.1
- 3.7
- 20
- 1.7 2.0 1.0
- 55 to 150
- 3.9
- 2.8 A
- 0.9 1.1 0.6 W _C
THERMAL RESISTANCE RATINGS
Parameter
M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72068 S-31988- Rev. B,...
