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N-Channel 100 V (D-S) MOSFET
Si4102DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.158 at VGS = 10 V 100
0.175 at VGS = 6 V
ID (A)d 3.8 3.6
Qg (Typ.) 4.6 nC
FEATURES • TrenchFET® Power MOSFET • 100 % UIS Tested • Material categorization:
For definitions of compliance please see www.vishay.
SI4102DY Datasheet
