SI4362DY
SI4362DY is N-Channel MOSFET manufactured by Vishay.
FEATURES
PRODUCT SUMMARY
VDS (V)
30 r DS(on) (W)
0.0045 @ VGS = 10 V 0.0055 @ VGS = 4.5 V
ID (A)
20 19
D Trench FETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D 100% Rg Tested
APPLICATIONS
D DC/DC Converters D Synchronous Rectifiers
SO-8
D S S S G 1 2 3 4 Top View 8 7 6 5 D D D D G
Ordering Information: Si4362DY Si4362DY-T1 (with Tape and Reel) Si4362DY- E3 (Lead Free) Si4362DY-T1- E3 (Lead Free with Tape and Reel)
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)a
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
Limits
30 "12 20 15 60 2.9 3.5 2.2
- 55 to 150
Unit
THERMAL RESISTANCE RATINGSa
Parameter
Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board, t v 10 sec Document Number: 71628 S-40762- Rev. E, 19-Apr-04 .vishay.
Symbol
Rth JA Rth JF
Typical
29 13
Maximum
35 16
Unit
_C/W
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) r DS(on) gfs VSD VDS = VGS, ID = 250 m A VDS = 0 V, VGS = "12 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 19 A VDS = 15 V, ID = 20 A IS = 2.9 A, VGS = 0 V 30 0.0035 0.0042 90 0.75 1.1 0.0045 0.0055 0.6 "100 1 5 V n A m A A W S...
