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New Product
P-Channel 30-V (D-S) MOSFET
Si4427DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.0105 @ VGS = –10 V –30 0.0125 @ VGS = –4.5 V
0.0195 @ VGS = –2.5 V
ID (A)
–13.3 –12.2 –9.8
FEATURES D TrenchFETr Power MOSFETs
SO-8
S1 S2 S3 G4
8D 7D 6D 5D
Top View
Ordering Information: Si4427DY-T1 Si4427DY-T1–E3 (Lead (Pb)-free)
S G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage Gate-Source Voltage
VDS –30 VGS "12
Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range
TA = 25_C TA = 70_C
TA = 25_C TA = 70_C
ID
IDM IS
PD TJ, Tstg
–13.3
–9.4
–10.
SI4427DY Datasheet
