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SI4486EY - N-Channel MOSFET

Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Power MOSFETs.
  • 175 °C Maximum Junction Temperature.
  • PWM Optimized.
  • Compliant to RoHS Directive 2002/95/EC S1 S2 S3 G4 SO-8 Top View 8D 7D 6D 5D Ordering Information: Si4486EY-T1-E3 (Lead (Pb)-free) Si4486EY-T1-GE3 (Lead (Pb)-free and Halogen-free) D G S N-Channel MOSFET.

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Datasheet Details

Part number SI4486EY
Manufacturer Vishay
File Size 109.14 KB
Description N-Channel MOSFET
Datasheet download datasheet SI4486EY Datasheet
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N-Channel 100-V (D-S) MOSFET Si4486EY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 100 0.025 at VGS = 10 V 0.028 at VGS = 6.0 V ID (A) 7.9 7.5 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 175 °C Maximum Junction Temperature • PWM Optimized • Compliant to RoHS Directive 2002/95/EC S1 S2 S3 G4 SO-8 Top View 8D 7D 6D 5D Ordering Information: Si4486EY-T1-E3 (Lead (Pb)-free) Si4486EY-T1-GE3 (Lead (Pb)-free and Halogen-free) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C)a TA = 25 °C TA = 85 °C ID 7.9 5.4 6.1 4.
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