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Si4501DY
Vishay Siliconix
Complementary MOSFET (N- and P-Channel)
PRODUCT SUMMARY
N-Channel
VDS (V) 30
P-Channel
-8
RDS(on) (Ω) 0.018 at VGS = 10 V 0.027 at VGS = 4.5 V 0.042 at VGS = - 4.5 V 0.060 at VGS = - 2.5 V
ID (A) ±9 ± 7.4 ± 6.2 ± 5.2
S1 1 G1 2 S2 3 G2 4
SO-8
8D 7D 6D 5D
Top View
Ordering Information: Si4501DY-T1 Si4501DY-T1-E3 (Lead (Pb)-free)
FEATURES • Compliant to RoHS Directive 2002/95/EC
S2 G2
D G1
S1
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
VDS 30
-8
Gate-Source Voltage
VGS ± 20
±8
Continuous Drain Current (TJ = 150 °C)a, b
TA = 25 °C TA = 70 °C
ID
±9 ± 7.4
± 6.2 ± 5.0
Pulsed Drain Current
IDM ± 30
± 20
Continuous Source Current (Diode Conduction)a, b
IS 1.7
- 1.
SI4501DY Datasheet
