Datasheet4U Logo Datasheet4U.com

SI4559EY - MOSFET

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Power MOSFETs.
  • 175 °C Maximum Junction Temperature.
  • Compliant to RoHS Directive 2002/95/EC SO-8 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View Ordering Information: Si4559EY-T1-E3 (Lead (Pb)-free) Si4559EY-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 S2 G2 G1 S1 N-Channel MOSFET D2 P-Channel MOSFET.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SI4559EY-T1-E3 Dual-Channel MOSFET VBsemi
Si4554DY N- and P-Channel 40 V (D-S) MOSFET Vishay
SI4558DY Complementary Power Trench MOSFET Kexin
SI4558DY N- and P-Channel 30-V (D-S) MOSFET Vishay
SI4501BD MOSFET Vishay

Other Datasheets by Vishay

Part Number Description
SI4559ADY Dual-Channel MOSFET
SI4500BDY Complementary MOSFET
SI4500DY Complementary MOSFET
SI4501ADY Complementary MOSFET
SI4501DY Complementary MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Si4559EY Vishay Siliconix N- and P-Channel 60-V (D-S), 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) N-Channel 60 0.055 at VGS = 10 V 0.075 at VGS = 4.5 V P-Channel - 60 0.120 at VGS = - 10 V 0.150 at VGS = - 4.5 V ID (A) ± 4.5 ± 3.9 ± 3.1 ± 2.