SI4825DY - P-Channel MOSFET

Vishay

Key Features

Halogen-free According to IEC 61249-2-21 Definition.
TrenchFET® Power MOSFETs.
100 % Rg Tested.
Compliant to RoHS Directive 2002/95/EC SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View Ordering Information: Si4825DY-T1-E3 (Lead (Pb)-free) Si4825DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S G D P-Channel MOSFET.

SI4825DY p-channel mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	SI4825DY
Manufacturer	Vishay
File Size	102.52 KB
Description	P-Channel MOSFET
Datasheet	SI4825DY Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
Si4825-A10	BROADCAST MECHANICAL TUNING AM/FM/SW RADIO RECEIVER	Silicon Laboratories
Si4825-A10	BROADCAST MECHANICAL TUNING AM/FM/SW RADIO RECEIVER	Skyworks
Si4820-A10	BROADCAST MECHANICAL TUNING AM/FM/SW RADIO RECEIVER	Silicon Laboratories
Si4822-A10	BROADCAST ANALOG TUNING DIGITAL DISPLAY AM/FM/SW RADIO RECEIVER	Silicon Laboratories
Si4824-A10	BROADCAST MECHANICAL TUNING AM/FM/SW RADIO RECEIVER	Silicon Laboratories

Other Datasheets by Vishay

Part Number	Description
SI4828DY	Dual N-Channel MOSFET
SI4804BDY	Dual N-Channel MOSFET
SI4804DY	Dual N-Channel MOSFET
SI4807DY	P-Channel MOSFET
SI4810DY	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

P-Channel 30-V (D-S) MOSFET Si4825DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.014 at VGS = - 10 V 0.022 at VGS = - 4.5 V ID (A) - 11.5 - 9.2 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View Ordering Information: Si4825DY-T1-E3 (Lead (Pb)-free) Si4825DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS ± 25 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID - 11.5 - 9.2 - 8.1 - 6.