SI4833DY Datasheet | Vishay

Vishay Siliconix P-Channel 30-V (D-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) - 30 r DS(on) (W) 0.085 @ VGS = - 10 V 0.180 @ VGS = - 4.5 V ID (A) "3.5 "2.5 SCHOTTKY PRODUCT SUMMARY VKA (V) VF (V) Diode Forward Voltage 0.5 V @ 1.0 A IF (A) 1.4 S K SO-8 1 2 3 4 Top View 8 7 6 5 K K D D D A G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150_C) (MOSFET)a, b Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a, b Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET)a, b Maximum Power Dissipation (Schottky)a, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C TJ, Tstg PD TA = 25_C TA = 70_C Symbol VDS VKA VGS ID IDM IS IF IFM Limit - 30 30 "20 "3.5 "2.8 "20 - 1.7 1.4 30 2 1.3 1.9 1.2 - 55 to 150 Unit _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (t v 10...