Full PDF Text Transcription for SI4896DY (Reference)
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N-Channel 80-V (D-S) MOSFET Si4896DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 80 0.0165 at VGS = 10 V 0.022 at VGS = 6.0 V ID (A) 9.5 8.3 FEATURES • Halogen-f...
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at VGS = 10 V 0.022 at VGS = 6.0 V ID (A) 9.5 8.3 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Compliant to RoHS Directive 2002/95/EC S1 S2 S3 G4 SO-8 8D 7D 6D 5D Top View Ordering Information: Si4896DY-T1-E3 (Lead (Pb)-free) Si4896DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 80 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 9.5 6.7 7.6 5.4 Pulsed Drain Current IDM 50 Avalanche Current L = 0
SI4896DY Datasheet
