SI4896DY
SI4896DY is N-Channel MOSFET manufactured by Vishay.
FEATURES
- Halogen-free According to IEC 61249-2-21 Definition
- Trench FET® Power MOSFETs
- pliant to Ro HS Directive 2002/95/EC
S1 S2 S3 G4
SO-8
8D 7D 6D 5D
Top View
Ordering Information: Si4896DY-T1-E3 (Lead (Pb)-free) Si4896DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS 80
Gate-Source Voltage
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
9.5 6.7 7.6 5.4
Pulsed Drain Current
IDM 50
Avalanche Current
L = 0.1 m H
Continuous Source Current (Diode Conduction)a
IS 2.8 1.4
Maximum Power Dissipationa
TA = 25 °C TA = 70 °C
3.1 1.56 2.0 1.0
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit...
