Datasheet Summary
Dual P-Channel 1.8 V (G-S) MOSFET
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) -8
RDS(on) (Ω) 0.070 at VGS =
- 4.5 V 0.108 at VGS =
- 2.5 V 0.162 at VGS =
- 1.8 V
ID (A)
- 4.6
- 3.7
- 3.0
1206-8 ChipFET®
S1
D1 D1
G1 S2
D2 G2
D2
Marking Code
DE XX
Lot Traceability and Date Code
Part # Code
Features
- Halogen-free According to IEC 61249-2-21
Definition
- TrenchFET® Power MOSFET
- Low Thermal Resistance
- 40 % Smaller Footprint than TSOP-6
- pliant to RoHS Directive 2002/95/EC
APPLICATIONS...