SI5935DC Overview
Dual P-Channel 1.8 V (G-S) MOSFET Si5935DC Vishay Siliconix PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.086 at VGS = - 4.5 V 0.121 at VGS = - 2.5 V 0.171 at VGS = - 1.8 V ID (A) - 4.1 - 3.4 - 2.9 1206-8 ChipFET® 1 S1 D1 G1 D1 S2 D2 G2 D2 Marking Code DF XX Lot.
SI5935DC Key Features
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET® Power MOSFETs
- Low RDS(on) Dual and Excellent Power Handling in a pact Footprint
- pliant to RoHS Directive 2002/95/EC