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Si6552DQ
Vishay Siliconix
Dual N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
N-Channel 20
rDS(on) (W)
0.08 @ VGS = 4.5 V 0.11 @ VGS = 2.5 V 0.1 @ VGS = - 4.5 V
ID (A)
"2.8 "2.1 "2.5 "1.9
P Channel P-Channel
- 12
0.18 @ VGS = - 2.5 V
D1
S2
TSSOP-8
D1 S1 S1 G1 1 2 3 4 Top View S1 N-Channel MOSFET D2 P-Channel MOSFET D 8 D2 7 S2 6 S2 5 G2 G2 G1
Si6552DQ
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID IDM IS 1.0 1.0 0.
SI6552DQ Datasheet
