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Si6562DQ
Vishay Siliconix
N- and P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
N-Channel 20
rDS(on) (W)
0.030 @ VGS = 4.5 V 0.040 @ VGS = 2.5 V
ID (A)
"4.5 "3.9 "3.5 "2.7
P-Channel
–20
0.050 @ VGS = –4.5 V 0.085 @ VGS = –2.5 V
D1
S2
TSSOP-8
D1 S1 S1 G1 1 2 3 4 Top View S1 N-Channel MOSFET D2 P-Channel MOSFET D 8 D2 S2 S2 G2 G1 G2
Si6562DQ
7 6 5
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
N-Channel
20 "12 "4.5 "3.6 "30 1.25 1.
SI6562DQ Datasheet
