• Part: SI6924AEDQ
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: Vishay
  • Size: 113.64 KB
Download SI6924AEDQ Datasheet PDF
Vishay
SI6924AEDQ
SI6924AEDQ is N-Channel MOSFET manufactured by Vishay.
Vishay Siliconix N-Channel 2.5-V (G-S) Battery Switch, ESD Protection PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.033 at VGS = 4.5 V 28 0.038 at VGS = 3.0 V 0.042 at VGS = 2.5 V ID (A) 4.6 4.3 4.1 Features - Halogen-free - Low RDS(on) - VGS Max Rating: 14 V - Exceeds 2 k V ESD Protection - 28 V VDS Rated - Symmetrical Voltage Blocking (Off Voltage) Ro HS PLIANT DESCRIPTION The Si6924AEDQ is a dual N-Channel MOSFET with ESD protection and gate over-voltage protection circuitry incorporated into the MOSFET. The device is designed for use in Lithium Ion battery pack circuits. The mon-drain construction takes advantage of the typical battery pack topology, allowing a further reduction of the device’s onresistance. The 2-stage input protection circuit is a unique design, consisting of two stages of back-to-back zener diodes separated by a resistor. The first stage diode is designed to absorb most of the ESD energy. The second stage diode is designed to protect the gate from any remaining ESD energy and over-voltages above the gates inherent safe operating range. The series resistor used to limit the current through the second stage diode during over voltage conditions has a maximum value which limits the input current to ≤ 10 m A at 14 V and the maximum toff to 12 µs. The Si6924AEDQ has been optimized as a battery or load switch in Lithium Ion applications with the advantage of both a 2.5 V RDS(on) rating and a safe 14 V gate-to-source maximum rating. APPLICATION CIRCUITS ESD and Overvoltage Protection ESD and Overvoltage Protection Battery Protection Circuit - Thermal connection to drain pins is required to achieve specific performance Figure 1. Typical Use In a Lithium Ion Battery Pack R- - G - - R typical value is 3.3 kΩ by design. See Typical Characteristics, Gate-Current vs. Gate-Source Voltage, Page 3. Figure 2. Input ESD and Overvoltage Protection...