SI7120DN Datasheet | Vishay

FEATURES ID (A) 10 8.2 r DS(on) (W) 0.019 @ VGS = 10 V 0.028 @ VGS = 4.5 V D Trench FETr Power MOSFET D New Low Thermal Resistance D Power PAKr 1212-8 Package with Low 1.07-mm Profile D 100% Rg Tested Ro HS PLIANT Available APPLICATIONS Power PAK 1212-8 D Primary Side Switch D Synchronous Rectification 3.30 mm S 1 2 S 3 S 3.30 mm 4 D 8 7 D 6 D 5 D Ordering Information: Si7120DN-T1 Si7120DN-T1- E3 (Lead (Pb)-Free) S N-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Avalanche Current Single Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature)b,c L = 0.1 0 1 m H TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 10 secs 60 "20 10 8.0 40 3.2 22 24 3.8 2.4 Steady State Unit 6.3 5.1 A 1.3 m J 1.5 1.0 W - 55 to 150 260 _C THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) t v 10 sec Steady State Steady State Symbol Rth JA Rth...