SI7447DP Datasheet | Vishay

FEATURES ID (A) -24 r DS(on) (W) 0.006 @ VGS = -10 V D Trench FETr Power MOSFETS D New Low Thermal Resistance Power PAKt Package with Low 1.07-mm Profile APPLICATIONS D Battery and Load Switching - Notebook puters - Notebook Battery Packs Power PAKt SO-8 6.15 mm S 1 2 3 S S 5.15 mm G G 4 D 8 7 6 5 D D D Bottom View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID - 19 IDM IS -4.5 5.4 3.4 -55 to 150 -60 -1.6 1.9 1.2 W _C -1 1 A Symbol VDS VGS 10 secs Steady State -30 "25 Unit -24 -14 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71970 S-21475- Rev. A, 26-Aug-02 .vishay. Steady State Steady State Rth JA Rth JC Symbol Typical 18 50 1.0 Maximum 23 65...