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SI7703EDN - Single P-Channel 20-V (D-S) MOSFET With Schottky Diode

Features

  • ID (A).
  • 6.3.
  • 5.3.
  • 4.6 rDS(on) (W) 0.048 @ VGS =.
  • 4.5 V 0.068 @ VGS =.
  • 2.5 V 0.090 @ VGS =.
  • 1.8 V D TrenchFETr Power.

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Datasheet Details

Part number SI7703EDN
Manufacturer Vishay Siliconix
File Size 54.06 KB
Description Single P-Channel 20-V (D-S) MOSFET With Schottky Diode
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Full PDF Text Transcription

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Si7703EDN New Product Vishay Siliconix Single P-Channel 20-V (D-S) MOSFET With Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) –20 FEATURES ID (A) –6.3 –5.3 –4.6 rDS(on) (W) 0.048 @ VGS = –4.5 V 0.068 @ VGS = –2.5 V 0.090 @ VGS = –1.8 V D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 4500 V D Ultra-Low Thermal Resistance, PowerPAKt Package with Low 1.07-mm Profile APPLICATIONS D Charger Switching SCHOTTKY PRODUCT SUMMARY VKA (V) 20 Vf (V) Diode Forward Voltage 0.48 V @ 0.5 A IF (A) 1.0 PowerPAKt 1212-8 S K 3.30 mm A 1 2 3.
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