SI7909DN Description
Si7909DN New Product Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.037 @ VGS = 4.5 V 12 0.048 @ VGS = 2.5 V 0.068 @ VGS = 1.8 V ID (A) 7.7 6.8.
SI7909DN Key Features
- TrenchFET® Power MOSFETS: 1.8-V Rated
- New Low Thermal Resistance PowerPAK® Package
- Advanced High Cell Density Process
- Ultra-Low rDS(on), and High PD Capability