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SI9410BDY - N-Channel MOSFET

Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Power MOSFETs.
  • Compliant to RoHS Directive 2002/95/EC S1 S2 S3 G4 SO-8 8D 7D 6D 5D Top View Ordering Information: Si9410BDY-T1-E3 (Lead (Pb)-free) Si9410BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) D G S N-Channel MOSFET.

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Datasheet Details

Part number SI9410BDY
Manufacturer Vishay Siliconix
File Size 103.99 KB
Description N-Channel MOSFET
Datasheet download datasheet SI9410BDY Datasheet
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Full PDF Text Transcription

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N-Channel 30-V (D-S) MOSFET Si9410BDY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.024 at VGS = 10 V 0.033 at VGS = 4.5 V ID (A) 8.1 6.9 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Compliant to RoHS Directive 2002/95/EC S1 S2 S3 G4 SO-8 8D 7D 6D 5D Top View Ordering Information: Si9410BDY-T1-E3 (Lead (Pb)-free) Si9410BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 8.1 6.2 6.5 5.
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