SIE800DF Description
SiE800DF New Product .. Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY ID (A)a VDS (V) 30 rDS(on) (Ω) 0.0072 at VGS = 10 V 0.0115 at VGS = 4.5 V Silicon Limit 90 73 Package Qg (Typ) Limit 50 12 nC.
SIE800DF Key Features
- Extremely Low Qgd WFET Technology for Low Switching Losses RoHS
- TrenchFET® Power MOSFET PLIANT
- Ultra Low Thermal Resistance Using ® Top-Exposed PolarPAK Package for Double-Sided Cooling
- Leadframe-Based New Encapsulated Package
- Die Not Exposed
- Same Layout Regardless of Die Size
- Low Qgd/Qgs Ratio Helps Prevent Shoot-Through
- 100 % Rg and UIS Tested