SIHFPC50LC Datasheet | Vishay

IRFPC50LC, Si HFPC50LC Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (n C) Qgs (n C) Qgd (n C) Configuration VGS = 10 V 84 18 36 Single Features 600 0.60 - - - - - - - - Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V VGS Rating Reduced Ciss, Coss, Crss Isolated Central Mounting Hole Dynamic d V/dt Rating Repetitive Avalanche Rated Lead (Pb)-free Available Available Ro HS- PLIANT DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFET technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements bined with the proven ruggedness and reliability of Power MOSFETs offer the designer a new standard in power transistors for switching applications. The TO-247 package is preferred for mercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole. TO-247 G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free Sn Pb TO-247 IRFPC50LCPb F Si HFPC50LC-E3 IRFPC50LC Si HFPC50LC .. PARAMETER Drain-Source Voltage Gate-Source...