SIHG20N50C Description
SiHG20N50C Vishay Siliconix Power MOSFET D TO-247 S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. (nC) Qgs (nC) 560 VGS = 10 V 76 21 Qgd (nC) Configuration 34 Single 0.270.
SIHG20N50C Key Features
- Low figure-of-merit Ron x Qg
- 100 % avalanche tested
- High peak current capability
- dv/dt ruggedness
- Improved Trr/Qrr
- Improved gate charge
- High power dissipations capability
- Material categorization: for definitions of pliance please see .vishay./doc?99912