SIR410DP Description
SiR410DP Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.0048 at VGS = 10 V 0.0063 at VGS = 4.5 V ID (A)a 35 12.7 nC 35 Qg (Typ.).
SIR410DP Key Features
- Halogen-free
- TrenchFET® Power MOSFET
- 100 % Rg Tested
- 100 % UIS Tested