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SiR410DP
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 20 RDS(on) (Ω) 0.0048 at VGS = 10 V 0.0063 at VGS = 4.5 V ID (A)a 35 12.7 nC 35 Qg (Typ.)
FEATURES
• Halogen-free • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested
PowerPAK® SO-8
APPLICATIONS
• DC/DC Converter - Notebook - POL
D
6.15 mm
S 1 2 3 S S
5.15 mm
G 4
D 8 7 6 5 D D D
G
Bottom View Ordering Information: SiR410DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Avalanche Current Avalanche Energy TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C L = 0.
SIR410DP Datasheet
