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SiR470DP
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 40 RDS(on) (Ω) 0.0023 at VGS = 10 V 0.00265 at VGS = 4.5 V ID (A)a 60 60 Qg (Typ.) 45.5 nC
FEATURES
• • • • Halogen-free TrenchFET® Gen III Power MOSFET 100 % Rg Tested 100 % UIS Tested
RoHS
COMPLIANT
PowerPAK® SO-8
APPLICATIONS
• Secondary Side Synchronous Rectification • Power Supply
6.15 mm
S 1 2 3 S S
5.15 mm
D
G 4
D 8 7 6 5 D D D
G
Bottom View Ordering Information: SiR470DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.
SIR470DP Datasheet
