SS3P3 Datasheet | Vishay

.Data Sheet.co.kr New Product Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers Features - Very low profile - typical height of 1.0 mm e SMP Series ® - Ideal for automated placement - Low forward voltage drop, low power losses - High efficiency - Low thermal resistance - Meets MSL level 1, per LF maximum peak of 260 °C - AEC-Q101 qualified J-STD-020, DO-220AA (SMP) - pliant to Ro HS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM EAS VF TJ max. 3.0 A 30 V 50 A 11.25 m J 0.43 V 150 °C MECHANICAL DATA Case: DO-220AA (SMP) Molding pound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, Ro HS pliant, and mercial grade Base P/NHM3 - halogen-free, Ro HS pliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters and polarity protection applications. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Non-repetitive avalanche energy at TJ = 25 °C, IAS = 1.5 A, L = 10 m H Voltage rate of change (rated VR) Operating junction and storage temperature range VRRM IF(AV) IFSM EAS d V/dt TJ, TSTG SYMBOL SS3P3 33 30 3.0 50 11.25 10 000 - 55 to + 150 V A A m J V/μs °C UNIT Document Number: 88944 Revision: 19-Apr-11 For technical questions within your region, please contact one of the following: .vishay. Diodes Americas@vishay., Diodes Asia@vishay., Diodes Europe@vishay. 1 This document is subject to...