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SUP/SUB85N02-03
New Product
Vishay Siliconix
N-Channel 20-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V) rDS(on) (W)
0.003 @ VGS = 4.5 V
ID (A)a
85 85 85
20
0.0034 @ VGS = 2.5 V 0.0038 @ VGS = 1.8 V
TO-220AB
D
TO-263
G DRAIN connected to TAB G G D S Top View SUP85N02-03 SUB85N02-03 D S
Top View S
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Parameter Symbol
VDS VGS TC = 25_C TC = 100_C ID IDM IAR
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Limit
20
"8 85 85 240 30 45 250 –55 to 175 mJ W _C A V
Unit
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)a Pulsed Drain Current Avalanche Current Repetitive Avalanche Power Dissipationa Operating Junction and Storage Temperature Range Energyb L = 0.
SUB85N02-03 Datasheet
