Datasheet4U Logo Datasheet4U.com

SUD50P04-09L - P-Channel MOSFET

Key Features

  • ID (A)d - 50 - 50 rDS(on) (W) 0.0094 @ VGS = - 10 V 0.0145 @ VGS = - 4.5 V D TrenchFETr Power MOSFET D 175_C Junction Temperature.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SUD50P04-09L New Product Vishay Siliconix P-Channel 40-V (D-S), 175_C MOSFET PRODUCT SUMMARY VDS (V) - 40 FEATURES ID (A)d - 50 - 50 rDS(on) (W) 0.0094 @ VGS = - 10 V 0.0145 @ VGS = - 4.5 V D TrenchFETr Power MOSFET D 175_C Junction Temperature APPLICATIONS D Automotive 12-V Boardnet S TO-252 G Drain Connected to Tab G D S Top View Ordering Information: SUD50P04-09L D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Power Dissipation Operating Junction and Storage Temperature Range L = 0.