SUM110N04-03
FEATURES
PRODUCT SUMMARY
V(BR)DSS (V)
40 r DS(on) (W)
0.0028 @ VGS = 10 V
ID (A)
110 a
D Trench FETr Power MOSFET D 200_C Junction Temperature D New Package with Low Thermal Resistance
APPLICATIONS
D Automotive
- ABS
- 12-V EPS
- Motor Drives
TO-263
Top View Ordering Information: SUM110N04-03N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb L = 0.1 m H TC = 25_C TA = 25_C TC = 25_C TC = 125_C
Symbol
VDS VGS ID IDM IAR EAR PD TJ, Tstg
Limit
40 "20 110a 110a 440 70 211 437.5c 3.75
- 55 to 200
Unit
A m J W _C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient Junction-to-Case (Drain) Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB...
