SUM110N04-04
FEATURES r DS(on) (W) ID (A)
110 a
D Trench FETr Power MOSFETS: 1.8-V Rated D 175_C Junction Temperature
0.0035 @ VGS = 10 V
APPLICATIONS
D Automotive
- ABS
- 12-V EPS
- Motor Drivers
TO-263
Top View SUM110N04-04 S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb Operating Junction and Storage Temperature Range L = 0.1 m H TC = 25_C TA = 25_C d TC = 25_C TC = 125_C
Symbol
VDS VGS ID IDM IAR EAR PD TJ, Tstg
Limit
40 20 110a 107a 350 60 180 250c 3.75 -55 to 175
Unit
A m J W _C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 72077 S-22450- Rev. B, 20-Jan-03 .vishay....
