Click to expand full text
SUM110N04-04
New Product
Vishay Siliconix
N-Channel 40-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
40
FEATURES
rDS(on) (W) ID (A)
110 a
D TrenchFETr Power MOSFETS: 1.8-V Rated D 175_C Junction Temperature
0.0035 @ VGS = 10 V
APPLICATIONS
D Automotive - ABS - 12-V EPS - Motor Drivers
D
TO-263
G
G
D S
Top View SUM110N04-04 S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C d TC = 25_C TC = 125_C
Symbol
VDS VGS ID IDM IAR EAR PD TJ, Tstg
Limit
40 20 110a 107a 350 60 180 250c 3.
SUM110N04-04 Datasheet
