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SUM110N06-04L - N-Channel 60-V (D-S) 200C MOSFET

Features

  • rDS(on) (W) ID (A) 110 a 0.0035 @ VGS = 10 V 0.005 @ VGS = 4.5 V D TrenchFETr Power.

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Datasheet Details

Part number SUM110N06-04L
Manufacturer Vishay Siliconix
File Size 43.26 KB
Description N-Channel 60-V (D-S) 200C MOSFET
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SUM110N06-04L New Product Vishay Siliconix N-Channel 60-V (D-S) 200_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 FEATURES rDS(on) (W) ID (A) 110 a 0.0035 @ VGS = 10 V 0.005 @ VGS = 4.5 V D TrenchFETr Power MOSFETS D 200_C Junction Temperature D New Low Thermal Resistance Package APPLICATIONS D TO-263 D Automotive – Boardnet 42-V EPS and ABS – Motor Drives D High Current D DC/DC Converters G G D S S N-Channel MOSFET Top View SUM110N06-04L ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb Operating Junction and Storage Temperature Range L = 0.
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