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SUM110N06-04L
New Product
Vishay Siliconix
N-Channel 60-V (D-S) 200_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
60
FEATURES
rDS(on) (W) ID (A)
110 a
0.0035 @ VGS = 10 V 0.005 @ VGS = 4.5 V
D TrenchFETr Power MOSFETS D 200_C Junction Temperature D New Low Thermal Resistance Package
APPLICATIONS
D
TO-263
D Automotive – Boardnet 42-V EPS and ABS – Motor Drives D High Current D DC/DC Converters
G
G
D S S N-Channel MOSFET
Top View SUM110N06-04L
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb Operating Junction and Storage Temperature Range L = 0.