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SUM60N04-06T
New Product
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET with Sensing Diode
FEATURES PRODUCT SUMMARY
V(BR)DSS (V)
40
rDS(on) (W)
0.0055 @ VGS = 10 V
ID (A)
60a
D TrenchFETr Power MOSFETS Plus Temperature Sensing Diode D 175_C Junction Temperature D New Low Thermal Resistance Package
APPLICATIONS
D
D2PAK-5L
D Automotive D Industrial
T1 G T2 1 2 3 4 5 D1 D2
S N-Channel MOSFET G D T1 S T2
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)d Pulsed Drain Current Continous Diode Current (Diode Conduction)d Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.
SUM60N04-06T Datasheet
