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SUP/SUB75N06-08
Vishay Siliconix
N-Channel 60-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
60
rDS(on) (W)
0.008
ID (A)
75a
TO-220AB
D
TO-263
G DRAIN connected to TAB G G D S Top View SUP75N06-08 D S S N-Channel MOSFET
Top View SUB75N06-08
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Power Dissipation Operating Junction and Storage Temperature Range Energyb L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)d PD TJ, Tstg TC = 25_C TC = 125_C ID IDM IAR EAR
Symbol
VGS
Limit
"20 75a 55 240 60 280 250c 3.
SUP75N06-08 Datasheet
