SUR50N03-09P - N-Channel 30-V (D-S) MOSFET

Vishay

General Description

The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS.

55 to 125°C temperature ranges under the pulsed 0 to 10V gate drive.

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SUR50N03-09P n-channel 30-v (d-s) mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	SUR50N03-09P
Manufacturer	Vishay
File Size	178.25 KB
Description	N-Channel 30-V (D-S) MOSFET
Datasheet	SUR50N03-09P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPICE Device Model SUR50N03-09P Vishay Siliconix N-Channel 30-V (D-S) MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0 to 10V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.