Datasheet4U Logo Datasheet4U.com

SUU50N03-09P - N-Channel MOSFET

Description

only.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document.

Features

  • ID (A)b 63b 52b rDS(on) (Ω) 0.0095 @ VGS = 10 V 0.014 @ VGS = 4.5 V D TrenchFETr Power MOSFET D Optimized for High- or Low-Side.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SUU09N10-76P N-Channel 100 V (D-S) MOSFET Vishay

Other Datasheets by Vishay

Part Number Description
SUU50N03-10P N-Channel MOSFET
SUU50N03-12P N-Channel MOSFET
SUU50N10-18P N-Channel MOSFET
SUU10P06-280L P-Channel MOSFET
SUU15N15-95 N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.net SUU50N03-09P Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A)b 63b 52b rDS(on) (Ω) 0.0095 @ VGS = 10 V 0.014 @ VGS = 4.5 V D TrenchFETr Power MOSFET D Optimized for High- or Low-Side APPLICATIONS D DC/DC Converters D Synchronous Rectifiers TO-251 D G and DRAIN-TAB G D S Top View Order Number: SUU50N03-09P SUU50N03-09P—E3 (Lead (Pb)-Free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.
Published: |