Si3865BDV
DESCRIPTION
The Si3865BDV includes a p- and n-channel MOSFET in a single TSOP-6 package. The low on-resistance p-channel Trench FET® is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a levelshift to drive the p-channel load-switch. The n-channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The Si3865BDV operates on supply lines from 1.8 V to 8 V, and can drive loads up to 2.9 A.
APPLICATION CIRCUITS
VIN R1
4 Q2
2, 3
C1 6
VOUT
ON/OFF Ci
R2
5 Q1
1 R2
Co
LOAD GND
FEATURES
- Halogen-free According to IEC 61249-2-21 Definition
- 60 m Low RDS(on) Trench FET®: 1.8 V Rated
- 1.8 V to 8 V Input
- 1.5 V to 8 V Logic Level Control
- Low Profile, Small Footprint TSOP-6 Package
- 3000 V ESD Protection On Input Switch, VON/OFF
- Adjustable Slew-Rate
- pliant to Ro HS Directive 2002/95/EC
Time (µS)
32 td(off)
IL = 1 A VON/OFF = 3 V
Ci = 10 µF Co = 1 µF tf
16 tr 8 td(on)
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