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Si3865BDV - Load Switch with Level-Shift

Description

The Si3865BDV includes a p- and n-channel MOSFET in a single TSOP-6 package.

The low on-resistance p-channel TrenchFET® is tailored for use as a load switch.

The n-channel, with an external resistor, can be used as a levelshift to drive the p-channel load-switch.

Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • 60 m Low RDS(on) TrenchFET®: 1.8 V Rated.
  • 1.8 V to 8 V Input.
  • 1.5 V to 8 V Logic Level Control.
  • Low Profile, Small Footprint TSOP-6 Package.
  • 3000 V ESD Protection On Input Switch, VON/OFF.
  • Adjustable Slew-Rate.
  • Compliant to RoHS Directive 2002/95/EC Time (µS) 40 32 td(off) IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF tf 24 16 tr 8 td(on) 0 02468 R2 (k) Note: For.

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Datasheet Details

Part number Si3865BDV
Manufacturer Vishay Siliconix
File Size 202.92 KB
Description Load Switch with Level-Shift
Datasheet download datasheet Si3865BDV Datasheet
Additional preview pages of the Si3865BDV datasheet.

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Full PDF Text Transcription

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Load Switch with Level-Shift Si3865BDV Vishay Siliconix PRODUCT SUMMARY VDS2 (V) RDS(on) () 1.8 to 8 0.060 at VIN = 4.5 V 0.100 at VIN = 2.5 V 0.175 at VIN = 1.8 V ID (A) 2.9 2.2 1.7 DESCRIPTION The Si3865BDV includes a p- and n-channel MOSFET in a single TSOP-6 package. The low on-resistance p-channel TrenchFET® is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a levelshift to drive the p-channel load-switch. The n-channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The Si3865BDV operates on supply lines from 1.8 V to 8 V, and can drive loads up to 2.9 A.
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