Si4384DY
FEATURES
- Halogen-free According to IEC 61249-2-21 Available
- Trench FET® Gen II Power MOSFETs
- PWM Optimized
- 100 % Rg Tested
APPLICATIONS
SO-8
S S S G 1 2 3 4 Top View S Ordering Information: Si4384DY-T1-E3 (Lead (Pb)-free) Si4384DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET 8 7 6 5 D D D D G
- High-Side DC/DC Conversion
- Notebook
- Desktop
- Server
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Single Pulse Avalanche Current Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range Conduction)a L = 0.1 m H TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 3.1 20
- 55 to 150 2.8 25 31 1.47 .95 m J W °C 15 12 ± 50 1.3 10 s 30 ± 20 10 8 A Steady State Unit V
THERMAL RESISTANCE RATINGS
Parameter Symb Maximum Junction-to-Ambient...
