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IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
250
RDS(on) (Ω)
VGS = 10 V
Qg (Max.) (nC)
34
Qgs (nC)
6.5
Qgd (nC)
16
Configuration
Single
0.435
I2PAK (TO-262)
TO-220
D
S D G
S D
GG
D2PAK (TO-263)
S N-Channel MOSFET
GD S
FEATURES • Advanced Process Technology • Dynamic dV/dt Rating • 175 °C Operating Temperature • Fast Switching • Fully Avalanche Rated • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.