SiHF640S Datasheet | Vishay

FEATURES - Surface mount - Low-profile through-hole - Available in tape and reel Available - Dynamic d V/dt rating - 150 °C operating temperature Available - Fast switching - Fully avalanche rated - Material categorization: for definitions of pliance please see .vishay./doc?99912 Note - This datasheet provides information about parts that are Ro HS-pliant and / or parts that are non-Ro HS-pliant. For example, parts with lead (Pb) terminations are not Ro HS-pliant. Please see the information / tables in this datasheet for details. DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best binations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of acmodating die size up to HEX-4. It provides the highest power capability and the last lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRF640L/Si HF640L) is available for low-profile applications. ORDERING INFORMATION Package D2PAK (TO-263) Lead (Pb)-free and Halogen-free Si HF640S-GE3 Lead (Pb)-free IRF640SPb F Si HF640S-E3 Note a. See device orientation. D2PAK (TO-263) Si HF640STRL-GE3 a IRF640STRLPb F a Si HF6340STL-E3 a D2PAK (TO-263) Si HF640STRR-GE3 a IRF640STRRPb F a Si HF640STR-E3 a I2PAK (TO-262) Si HF640L-GE3 IRF640LPb F Si HF640L-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current a, e Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS Single Pulse Avalanche Energy b, e Avalanche Current a Repetitive Avalanche Energy...