SiHF734 Datasheet | Vishay

FEATURES 450 1.2 - Dynamic d V/dt Rating - Repetitive Avalanche Rated - Fast Switching - Ease of Paralleling - Simple Drive Requirements - Lead (Pb)-free Ro HS PLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all mercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220 S G D S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free TO-220 IRF734Pb F Si HF734-E3 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta TC = 25 °C Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw EAS IAR EAR PD d V/dt TJ, Tstg VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT 450 ± 20 4.9 3.1 20 0.59 330 4.9 7.4 74 4.0 - 55 to + 150 300d 10 1.1 W/°C m J A m J W V/ns °C lbf - in N- m A UNIT V Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 24 m H, RG = 25 Ω, IAS = 4.9 A (see fig. 12). c. ISD ≤ 4.9 A, d I/dt ≤ 80 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. Document Number: 91049 S-Pending-Rev. A, 19-Jun-08 WORK-IN-PROGRESS .vishay. 1 IRF734, Si HF734 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SYMBOL Rth JA Rth CS Rth JC TYP. 0.50 MAX. 62 1.7 °C/W UNIT SPECIFICATIONS TJ = 25 °C, unless...