SiHF744 Datasheet | Vishay

FEATURES - Dynamic d V/dt Rating - Repetitive Avalanche Rated - Fast Switching - Ease of Paralleling - Simple Drive Requirements - Lead (Pb)-free Available Available Ro HS- PLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provides the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all mercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220 IRF744Pb F Si HF744-E3 IRF744 Si HF744 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc TC = 25 °C EAS IAR EAR PD d V/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 12 m H, RG = 25 Ω IAS = 8.8 A (see fig. 12). c. ISD ≤ 8.8 A, d V/dt ≤ 200 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. LIMIT 450 ± 20 8.8 5.6 35 1.0 540 8.8 13 125 3.5 - 55 to + 150 300d 10 1.1 UNIT V W/°C m J A m J W V/ns °C lbf - in N- m - Pb containing terminations are not Ro HS pliant, exemptions may...