SiHF820A Description
Power MOSFET IRF820A, SiHF820A Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 500 VGS = 10 V 17 Qgs (nC) 4.3 Qgd (nC) 8.5 Configuration Single 3.0 TO-220AB D S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb.
SiHF820A Key Features
- Low Gate Charge Qg Results in Simple Drive Requirement
- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and current
- Effective Coss Specified
- pliant to RoHS Directive 2002/95/EC