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SiHF820A - Power MOSFET

Features

  • Low Gate Charge Qg Results in Simple Drive Requirement.
  • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS.

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Power MOSFET IRF820A, SiHF820A Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 500 VGS = 10 V 17 Qgs (nC) 4.3 Qgd (nC) 8.5 Configuration Single 3.
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