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SiHF9Z34S - Power MOSFET

Download the SiHF9Z34S datasheet PDF. This datasheet also covers the SiHF9Z34L variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • Advanced process technology.
  • Surface mount (IRF9Z34S, SiHF9Z34S).
  • 175 °C operating temperature.
  • Fast switching Available.
  • P-channel.
  • Fully avalanche rated Available.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 Note.
  • This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminat.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SiHF9Z34L_VishaySiliconix.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.vishay.com IRF9Z34S, SiHF9Z34S Vishay Siliconix Power MOSFET D2PAK (TO-263) S G GD S D P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration -60 VGS = -10 V 34 9.9 16 Single 0.14 FEATURES • Advanced process technology • Surface mount (IRF9Z34S, SiHF9Z34S) • 175 °C operating temperature • Fast switching Available • P-channel • Fully avalanche rated Available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.