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SiHFBC40LC - Power MOSFET

General Description

This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional Power MOSFETs.

Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings.

Key Features

  • 600 V 1.2.
  • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V, VGS Rating Reduced Ciss, Coss, Crss Extremely High Frequency Operation Repetitive Avalanche Rated Lead (Pb)-free Available Available RoHS.

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Full PDF Text Transcription for SiHFBC40LC (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SiHFBC40LC. For precise diagrams, and layout, please refer to the original PDF.

IRFBC40LC, SiHFBC40LC Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 39 10 19 Single D FEATUR...

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C) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 39 10 19 Single D FEATURES 600 V 1.2 • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V, VGS Rating Reduced Ciss, Coss, Crss Extremely High Frequency Operation Repetitive Avalanche Rated Lead (Pb)-free Available Available RoHS* COMPLIANT www.DataSheet4U.com TO-220 DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional Power MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total sys