SiHFBC40S Datasheet | Vishay

FEATURES - Halogen-free According to IEC 61249-2-21 Definition - Surface Mount (IRFBC40S, Si HFBC40S) - Low-Profile Through-Hole (IRFBC40L, Si HFBC40L) - Available in Tape and Reel (IRFBC40S, Si HFBC40S) - Dynamic d V/dt Rating - 150 °C Operating Temperature - Fast Switching - Fully Avalanche Rated - pliant to Ro HS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of the acmodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRFBC40L, Si HFBC40L) is available for low-profile applications. D2PAK (TO-263) Si HFBC40STRL-GE3a IRFBC40STRLPb Fa Si HFBC40STL-E3a I2PAK (TO-262) Si HFBC40L-GE3 IRFBC40LPb F Si HFBC40L-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltagee Gate-Source Voltagee Continuous Drain Current Pulsed Drain Currenta,e Linear Derating Factor Single Pulse Avalanche Energyb, e Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc, e VGS at 10 V TC = 25 °C TC = 100 °C TC = 25 °C TA = 25 °C VDS VGS ID EAS IAR EAR PD d V/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) for 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V; starting TJ = 25 °C, L = 27 m H, Rg = 25 , IAS = 6.2 A (see fig. 12). c. ISD  6.2 A, d I/dt  80 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. e. Uses IRFBC40, Si HFBC40 data and test conditions. LIMIT 600 ± 20 6.2...