SiHFI734G Datasheet | Vishay

FEATURES 450 1.2 - Isolated Package - High Voltage Isolation = 2.5 k VRMS (t = 60 s; f = 60 Hz) - Sink to Lead Creepage Dist. 4.8 mm - Dynamic d V/dt - Low Thermal Resistance - Lead (Pb)-free Ro HS PLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in mercial-industrial applications. The molding pound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. TO-220 FULLPAK N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free TO-220 FULLPAK IRFI734GPb F Si HFI734G-E3 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) Mounting Torque Notes a. b. c. d. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). VDD = 50 V, starting TJ = 25 °C, L = 15 m H, RG = 25 Ω, IAS = 3.4 A (see fig. 12). ISD ≤ 4.9 A, d I/dt ≤ 80 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. 1.6 mm from case. for 10 s 6-32 or M3 screw TC = 25 °C EAS IAR EAR PD d V/dt TJ, Tstg VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT 450 ± 20 3.4 2.1 14 0.28 100 3.4 3.5 35 4.0 - 55 to + 150 300d 10 1.1 W/°C m J A m J W V/ns °C lbf - in N- m A UNIT V Document Number: 91154 S-Pending-Rev. A, 16-Jun-08 WORK-IN-PROGRESS .vishay. 1 IRFI734G, Si HFI734G Vishay...