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SiHFI734G Datasheet

Manufacturer: Vishay
SiHFI734G datasheet preview

Datasheet Details

Part number SiHFI734G
Datasheet SiHFI734G_VishaySiliconix.pdf
File Size 641.67 KB
Manufacturer Vishay
Description Power MOSFET
SiHFI734G page 2 SiHFI734G page 3

SiHFI734G Overview

Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in mercial-industrial applications. The molding pound used provides a high isolation capability and a low between the tab and external heatsink.

SiHFI734G Key Features

  • Isolated Package
  • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
  • Sink to Lead Creepage Dist. 4.8 mm
  • Dynamic dV/dt
  • Low Thermal Resistance
  • Lead (Pb)-free
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