SiHFP048 - Power MOSFET

Vishay

General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

60 0.018.
Dynamic dV/dt Rating.
Isolated Central Mounting Hole.
175 °C Operating Temperature.
Ease of Paralleling.
Simple Drive Requirements.
Lead (Pb)-free Available Available RoHS.

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SiHFP048 power mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	SiHFP048
Manufacturer	Vishay
File Size	1.30 MB
Description	Power MOSFET
Datasheet	SiHFP048 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRFP048, SiHFP048 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4U.com VGS = 10 V 110 29 38 Single D FEATURES 60 0.018 • Dynamic dV/dt Rating • Isolated Central Mounting Hole • 175 °C Operating Temperature • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices.