Datasheet Summary
IRFP254N, SiHFP254N
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration .. VGS = 10 V 100 17 44 Single
Features
250 0.125
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- -
- -
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Advanced Process Technology Dynamic dV/dt Rating 175 °C Operating Temperature Fully Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available
Available
RoHS-
PLIANT
TO-247
DESCRIPTION
Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that these Power...
