Datasheet4U Logo Datasheet4U.com

SiHFP254N - Power MOSFET

General Description

Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • 250 0.125.
  • Advanced Process Technology Dynamic dV/dt Rating 175 °C Operating Temperature Fully Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available Available RoHS.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SIHFP254 Power MOSFET Vishay
SIHFP22N50A Power MOSFET Vishay
SiHFP150 Power MOSFET Vishay
SiHFP350 N-Channel MOSFET INCHANGE
SiHFP360LC Power MOSFET Vishay

Other Datasheets by Vishay

Part Number Description
SiHFP250 Power MOSFET
SiHFP21N60L Power MOSFET
SiHFP22N60K Power MOSFET
SiHFP23N50L Power MOSFET
SiHFP240 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRFP254N, SiHFP254N Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4U.com VGS = 10 V 100 17 44 Single D FEATURES 250 0.125 • • • • • • • • Advanced Process Technology Dynamic dV/dt Rating 175 °C Operating Temperature Fully Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available Available RoHS* COMPLIANT TO-247 DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.