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SiHFP264N - Power MOSFET

General Description

Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well know for, provides the designer with an ectremely efficient and reliable device for use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices.

Overview

IRFP264N, SiHFP264N Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.

Key Features

  • 250 0.060 www. DataSheet4U. com.
  • Advanced Process Technology Dynamic dV/dt Rating 175 °C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available Available RoHS.