SiHFP264N Datasheet | Vishay

IRFP264N, Si HFP264N Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (n C) Qgs (n C) Qgd (n C) Configuration VGS = 10 V 210 34 94 Single Features 250 0.060 .. - - - - - - - - Advanced Process Technology Dynamic d V/dt Rating 175 °C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available Available Ro HS- PLIANT TO-247 DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that Power MOSFETs are well know for, provides the designer with an ectremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for mercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free Sn Pb TO-247 IRFP264NPb F Si HFP264N-E3 IRFP264N Si...